Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning
Identifieur interne : 000E19 ( Main/Repository ); précédent : 000E18; suivant : 000E20Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning
Auteurs : RBID : Pascal:13-0330663Descripteurs français
- Pascal (Inist)
- Composé III-V, Semiconducteur III-V, Nanofil, Nanomatériau, Cellule solaire, Nettoyage surface, Jonction p n, Réseau(arrangement), Gravure, Lithographie nanoimpression, Synthèse nanomatériau, Mécanisme croissance, Diode, Densité courant, Composé organique volatil, InP, Substrat indium phosphure, Substrat InP, 8107V, 8107B, 8460J, 8116.
English descriptors
- KwdEn :
Abstract
We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 107 is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm2, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term>
<term>Current density</term>
<term>Diodes</term>
<term>Etching</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Nanoimprint lithography</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Solar cells</term>
<term>Surface cleaning</term>
<term>Volatile organic compound</term>
<term>p n junctions</term>
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<front><div type="abstract" xml:lang="en">We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 10<sup>7</sup>
is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (V<sub>oc</sub>
) of 0.73 V, a short-circuit current density (J<sub>sc</sub>
) of 21 mA/cm<sup>2</sup>
, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning</s1>
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<fA11 i1="01" i2="1"><s1>YINGCHAO CUI</s1>
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<fA11 i1="02" i2="1"><s1>JIA WANG</s1>
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<fA11 i1="03" i2="1"><s1>PLISSARD (Sebastien R.)</s1>
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<fA11 i1="05" i2="1"><s1>VU (Thuy T. T.)</s1>
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<fA11 i1="06" i2="1"><s1>VAN VELDHOVEN (Rene P. J.)</s1>
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<fA11 i1="07" i2="1"><s1>LU GAO</s1>
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<fA11 i1="09" i2="1"><s1>VERHEIJEN (Marcel A.)</s1>
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<fA11 i1="10" i2="1"><s1>HAVERKORT (Jos E. M.)</s1>
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<fA11 i1="11" i2="1"><s1>BAKKERS (Erik P. A. M.)</s1>
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) of 0.73 V, a short-circuit current density (J<sub>sc</sub>
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<fC03 i1="13" i2="3" l="FRE"><s0>Diode</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Diodes</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Densité courant</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Current density</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Composé organique volatil</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Volatile organic compound</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Compuesto orgánico volátil</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Substrat indium phosphure</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Substrat InP</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8116</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>308</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>
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