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Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning

Identifieur interne : 000E19 ( Main/Repository ); précédent : 000E18; suivant : 000E20

Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning

Auteurs : RBID : Pascal:13-0330663

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English descriptors

Abstract

We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 107 is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm2, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.

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Pascal:13-0330663

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<div type="abstract" xml:lang="en">We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 10
<sup>7</sup>
is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (V
<sub>oc</sub>
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<sup>2</sup>
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</fC03>
<fC03 i1="11" i2="X" l="ENG">
<s0>Nanomaterial synthesis</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA">
<s0>Síntesis nanomaterial</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE">
<s0>Mécanisme croissance</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG">
<s0>Growth mechanism</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA">
<s0>Mecanismo crecimiento</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>Diode</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG">
<s0>Diodes</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE">
<s0>Densité courant</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG">
<s0>Current density</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE">
<s0>Composé organique volatil</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG">
<s0>Volatile organic compound</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA">
<s0>Compuesto orgánico volátil</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE">
<s0>InP</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE">
<s0>Substrat indium phosphure</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE">
<s0>Substrat InP</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE">
<s0>8107V</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE">
<s0>8107B</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE">
<s0>8460J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE">
<s0>8116</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21>
<s1>308</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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